Title :
A new perspective of barrier material evaluation and process optimization
Author :
Zhao, Larry ; Tikei, Z. ; Gischia, G.G. ; Volders, Henny ; Beyer, Gerald
Author_Institution :
Intel Corp., Leuven
Abstract :
A novel test structure based on a planar capacitor design has been used for advanced barrier material evaluation and process optimization. This structure enables intrinsic reliability study of Cu/low-k interconnects. Various barrier materials such as CuMn self-forming barrier, ALD Ru, and PVD TaNTa on different dielectric films have been investigated to understand their intrinsic limits of barrier performance. The learning generated from the novel test structure has been directly used for barrier optimization of dual damascene processes.
Keywords :
capacitors; dielectric thin films; interconnections; advanced barrier material evaluation; dielectric films; dual damascene processes; intrinsic reliability; planar capacitor design; process optimization; self-forming barrier; Atherosclerosis; Automatic testing; Capacitors; Design optimization; Dielectric films; Dielectric materials; Materials testing; Needles; Passivation; Probes; ALD Ru; CDO; Cu/low-k; CuMn; barrier; interconnect; planar capacitor; reliability; self-forming barrier;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090389
