Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Author

Egawa, T. ; Zhang, B. ; Nishikawa, N. ; Ishikawa, H. ; Jimbo, T.

Author_Institution

Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si[111] substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al/sub 0.27/Ga/sub 0.73/N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 /spl Omega/, an optical output power of 20 /spl mu/W and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60/spl deg/C.

Keywords

III-V semiconductors; MOCVD coatings; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device reliability; 100 ohm; 20 mA; 20 muW; 27 C; 500 h; 505 nm; 60 C; 7 V; Al/sub 0.27/Ga/sub 0.73/N-AlN; Al/sub 0.27/Ga/sub 0.73/N/AlN intermediate layer; InGaN; InGaN multiple-quantum-well green light-emitting diode; Si; Si [111] substrate; automatic current control; heteroepitaxial growth; metalorganic chemical vapor deposition; reliability; Chemical vapor deposition; Gallium nitride; Lattices; Light emitting diodes; MOCVD; Optical device fabrication; Power generation; Quantum well devices; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979467

Filename

979467