Title :
A low noise, high gain Q-band monolithic HEMT receiver
Author :
Aust, M.V. ; Alien, B. ; Dow, G.S. ; Kasody, R. ; Biedenbender, M. ; Wang, N.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A fully integrated MMIC receiver for Q-band was designed and fabricated using a 0.2 /spl mu/m pseudomorphic InGaAs HEMT technology process. This incorporates 3 microcells into a single macrocell. It contains a front end LNA which consists of a four stage balanced HEMT amplifier, a double-balanced HEMT diode mixer, and a 2 stage HEMT IF amplifier. This forms a highly compact millimeter MMIC receiver. Better than 30 dB conversion gain with a Noise figure of 3.5 dB for the downconverter is achieved. This chip operates from a +3 Vdc and draws 85 mA. Total chip size is 5.0 mm/spl times/3.0 mm.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; indium compounds; radio receivers; semiconductor device noise; 0.2 micron; 2 stage HEMT IF amplifier; 3 V; 3.0 mm; 3.5 dB; 30 dB; 5.0 mm; 85 mA; InGaAs; Q-band; conversion gain; double-balanced HEMT diode mixer; downconverter; four stage balanced HEMT amplifier; front end LNA; macrocell; millimeter MMIC receiver; monolithic HEMT receiver; noise figure; pseudomorphic InGaAs HEMT technology; Circuits; Fingers; Gain; HEMTs; Impedance matching; Millimeter wave technology; Noise figure; Radio frequency; Radiofrequency amplifiers; Space technology;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332100
