Low-noise performance of SiGe heterojunction bipolar transistors

Author

Schumacher, H. ; Erben, U. ; Gruhle, A.

Author_Institution

Dept. of Electron Devices, Ulm Univ., Germany

fYear

1994

fDate

22-25 May 1994

Firstpage

213

Lastpage

216

Abstract

We have demonstrated, for the first time, a microwave noise figure below 1 dB at 10 GHz from a heterojunction bipolar transistor. The current and frequency dependence of the results obtained agree with the well-established Hawkins theory for bipolar transistor noise performance. An enhanced equivalent noise circuit including major parasitics provides valuable insight for the optimization of these devices for low-noise operation. Typical applications may include integrated RF front-ends where low-noise amplification is desired in addition to low phase-noise oscillation and mixing which typically benefit from bipolar devices.<>

Keywords

Ge-Si alloys; equivalent circuits; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; solid-state microwave devices; 1 dB; 10 GHz; Hawkins theory; SiGe; SiGe heterojunction bipolar transistors; equivalent noise circuit; integrated RF front-ends; low phase-noise mixing; low phase-noise oscillation; low-noise amplification; microwave noise figure; optimization; parasitics; Bipolar transistors; Current density; Cutoff frequency; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave circuits; Microwave devices; Noise figure; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332101

Filename

332101