Interconnection with copper pillar bumps : Process and applications

Author

Lee, C.H.

Author_Institution

Amkor Technol. Korea, Seoul

fYear

2009

fDate

1-3 June 2009

Firstpage

214

Lastpage

216

Abstract

Flipchip technologies have been evolved to grab the major portion of the high and medium performance markets, where the bump interconnections are required. Bumps can be diverse in their contents, that is, binary, ternary, etc.. The most popular alloy is SnPb (eutectic), while the environmental importance pushes the market to adapt the green solution where SnAg or SnCu can be one of the choice. Considering the electrical performance including electro-migration effect and simplicity of the process, Cu bumps is chosen to be an alternative. In this presentation, the Cu pillar bump will be introduced embracing the fine pitch (less than 50 um) process and applications.

Keywords

copper; electromigration; flip-chip devices; integrated circuit interconnections; Cu; copper pillar bumps; electrical performance; electro-migration; fine pitch process; flipchip technologies; interconnection; Commercialization; Consumer electronics; Copper; Electrodes; Environmentally friendly manufacturing techniques; Flip chip; Lead; Packaging; Silver; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090391

Filename

5090391