DocumentCode :
2165195
Title :
Interconnection with copper pillar bumps : Process and applications
Author :
Lee, C.H.
Author_Institution :
Amkor Technol. Korea, Seoul
fYear :
2009
fDate :
1-3 June 2009
Firstpage :
214
Lastpage :
216
Abstract :
Flipchip technologies have been evolved to grab the major portion of the high and medium performance markets, where the bump interconnections are required. Bumps can be diverse in their contents, that is, binary, ternary, etc.. The most popular alloy is SnPb (eutectic), while the environmental importance pushes the market to adapt the green solution where SnAg or SnCu can be one of the choice. Considering the electrical performance including electro-migration effect and simplicity of the process, Cu bumps is chosen to be an alternative. In this presentation, the Cu pillar bump will be introduced embracing the fine pitch (less than 50 um) process and applications.
Keywords :
copper; electromigration; flip-chip devices; integrated circuit interconnections; Cu; copper pillar bumps; electrical performance; electro-migration; fine pitch process; flipchip technologies; interconnection; Commercialization; Consumer electronics; Copper; Electrodes; Environmentally friendly manufacturing techniques; Flip chip; Lead; Packaging; Silver; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
Type :
conf
DOI :
10.1109/IITC.2009.5090391
Filename :
5090391
Link To Document :
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