Title :
3-D numerical simulation of the pseudo-MOS transistor
Author :
Munteanu, D. ; Cristoloveanu, S. ; Guichard, E.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
The Ψ-MOSFET stands as the unique method permitting a quick and rather complete evaluation of the electrical properties of SOI wafers prior to any device processing. The aim of this paper is to report, for the first time, 3-D numerical simulations which validate the method and show the optimum conditions for application and parameter extraction
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; Ψ-MOSFET; 3D numerical simulation; SOI wafer; electrical properties; parameter extraction; pseudo-MOS transistor; Capacitance; Data systems; Doping; Numerical simulation; Parameter extraction; Probes; Schottky barriers; Silicon; Substrates; Virtual colonoscopy;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634949
