A monolithic 2-52 GHz HEMT matrix distributed amplifier in coplanar waveguide technology

Author

Heilig, R. ; Hollmann, D. ; Baumann, G.

Author_Institution

Alcatel SEL AG, Pforzheim, Germany

fYear

1994

fDate

22-25 May 1994

Firstpage

191

Lastpage

194

Abstract

This paper discusses design, performance and fabrication of a two-stage four-section GaAs monolithic matrix distributed amplifier covering the frequency range from 2 to 52 GHz. The achieved gain is about 9 dB and the return loss is better than 12 dB. The devices we used are 2/spl times/25 /spl mu/m, 0.2 /spl mu/m recessed gate AlGaAs-HEMTs and the coplanar waveguide was the propagation medium for this broadband amplifier. The chip dimensions of the amplifier including the bias networks are 2.0 mm/spl times/2.5 mm.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; microwave amplifiers; wideband amplifiers; 0.2 micron; 12 dB; 2 to 52 GHz; 9 dB; AlGaAs; HEMT matrix distributed amplifier; IC design; IC fabrication; MMIC; bias networks; broadband amplifier; coplanar waveguide; propagation medium; recessed gate AlGaAs-HEMTs; return loss; Broadband amplifiers; Circuit simulation; Coplanar waveguides; Dielectric loss measurement; Distributed amplifiers; Equivalent circuits; Frequency; HEMTs; Power transmission lines; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332106

Filename

332106