In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks

Author

Posseme, N. ; Bouyssou, R. ; Chevolleau, T. ; David, T. ; Arnal, V. ; Chhun, S. ; Monget, C. ; Richard, E. ; Galpin, D. ; Guillan, J. ; Arnaud, L. ; Roy, D. ; Guillermet, M. ; Ramard, J. ; Joubert, O. ; Vérove, C.

Author_Institution

CEA/LETI-Minatec, Grenoble

fYear

2009

fDate

1-3 June 2009

Firstpage

240

Lastpage

242

Abstract

H₂, O₂, NH₃ and CH₄ in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated for C045 dual damascene level using trench first MHM integration.

Keywords

etching; low-k dielectric thin films; masks; porous semiconductors; reliability; C045 dual damascene level; defect density; fluorocarbon based plasmas; metallic hard masks; porous low-k integration; post etching treatment; residues growth reduction; Dielectric materials; Etching; Hydrogen; Moisture; Plasma applications; Plasma chemistry; Plasma materials processing; Positron emission tomography; Surface topography; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090398

Filename

5090398