Title :
In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks
Author :
Posseme, N. ; Bouyssou, R. ; Chevolleau, T. ; David, T. ; Arnal, V. ; Chhun, S. ; Monget, C. ; Richard, E. ; Galpin, D. ; Guillan, J. ; Arnaud, L. ; Roy, D. ; Guillermet, M. ; Ramard, J. ; Joubert, O. ; Vérove, C.
Author_Institution :
CEA/LETI-Minatec, Grenoble
Abstract :
H2, O2, NH3 and CH4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated for C045 dual damascene level using trench first MHM integration.
Keywords :
etching; low-k dielectric thin films; masks; porous semiconductors; reliability; C045 dual damascene level; defect density; fluorocarbon based plasmas; metallic hard masks; porous low-k integration; post etching treatment; residues growth reduction; Dielectric materials; Etching; Hydrogen; Moisture; Plasma applications; Plasma chemistry; Plasma materials processing; Positron emission tomography; Surface topography; Tin;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090398
