Advanced Direct-CMP process for porous low-k thin film

Author

Korogi, Hayato ; Chibahara, Hiroyuki ; Suzuki, Shigeru ; Tsutsue, Makoto ; Seo, Kohei ; Oka, Yoshihiro ; Goto, Kinya ; Akazawa, Moriaki ; Miyatake, Hiroshi ; Matsumoto, Susumu ; Ueda, Tetsuya

Author_Institution

Renesas Technol. Corp., Itami

fYear

2009

fDate

1-3 June 2009

Firstpage

243

Lastpage

246

Abstract

In order to reduce the effective dielectric constant (keff) for the 32 nm technology node and beyond, direct-CMP of a porous low-k film without a protective cap layer is required. However, the degradation of breakdown electric field (Ebd) has been one of critical issues. This study clarified that the Ebd degradation was caused by the pit defects on the surface of porous low-k film during direct-CMP. In order to suppress the pit defects, we evaluated dependency of micro-pores density of CMP pads. As a result, we demonstrated that CMP pads with low-density micro-pores drastically reduced them and improved the Ebd degradation. In this paper, the mechanism for their reduction is also discussed.

Keywords

chemical mechanical polishing; low-k dielectric thin films; permittivity; breakdown electric field degradation; dielectric constant; direct-CMP process; micropores density; porous low-k thin film; protective cap layer; Chemistry; Cities and towns; Cleaning; Degradation; Dielectric constant; Mercury (metals); Probes; Slurries; Transistors; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090399

Filename

5090399