Title :
Sensitivity analysis of 50-GHz MMIC-LNA on gate-recess depth with InAlAs/InGaAs/InP HEMTs
Author :
Umeda, Y. ; Enoki, T. ; Ishii, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
This paper proposes a new systematic approach to the noise-figure (NF) sensitivity analysis of MMIC low-noise amplifiers (LNA) regarding device structure parameters such as gate-recess variation for the first time. A full-monolithic uniplanar two-stage LNA with an extremely low NF of 2.8 dB at 50 GHz is fabricated and analyzed using this new method. A comparative study reveals that the gate recess variation in the fabricated HEMTs causes no substantial NF variation in the MMIC-LNAs.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; sensitivity analysis; 50 GHz; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; MMIC low-noise amplifiers; MMIC-LNA; NF variation; device-structure parameters; fabricated HEMTs; gate-recess depth; gate-recess variation; noise-figure sensitivity analysis; sensitivity analysis; systematic approach; Circuit noise; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Noise figure; Noise measurement; Sensitivity analysis;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332114
