Title :
Physical background of hot-carrier-induced abnormal gm degradation in a sub-0.1-μm-channel nMOSFETs/SIMOX with an LDD structure
Author_Institution :
Dept. of Electron., Kansai Univ., Osaka, Japan
Abstract :
This paper describes hot-carrier-induced abnormal gm degradation in 0.04-μm-channel nMOSFETs/SIMOX, which is not easily predicted, and its physical background
Keywords :
MOSFET; SIMOX; hot carriers; 0.04 micron; LDD structure; hot-carrier-induced abnormal gm degradation; nMOSFET/SIMOX; transconductance; Degradation; Electron devices; Equations; Hot carriers; Immune system; Lifetime estimation; MOSFET circuits; Stress; Tellurium; Temperature;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634950