DocumentCode :
2165517
Title :
Physical background of hot-carrier-induced abnormal gm degradation in a sub-0.1-μm-channel nMOSFETs/SIMOX with an LDD structure
Author :
Omura, Yasuhisa
Author_Institution :
Dept. of Electron., Kansai Univ., Osaka, Japan
fYear :
1997
fDate :
6-9 Oct 1997
Firstpage :
96
Lastpage :
97
Abstract :
This paper describes hot-carrier-induced abnormal gm degradation in 0.04-μm-channel nMOSFETs/SIMOX, which is not easily predicted, and its physical background
Keywords :
MOSFET; SIMOX; hot carriers; 0.04 micron; LDD structure; hot-carrier-induced abnormal gm degradation; nMOSFET/SIMOX; transconductance; Degradation; Electron devices; Equations; Hot carriers; Immune system; Lifetime estimation; MOSFET circuits; Stress; Tellurium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
ISSN :
1078-621X
Print_ISBN :
0-7803-3938-X
Type :
conf
DOI :
10.1109/SOI.1997.634950
Filename :
634950
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2165517
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