Title :
A comparative study of dielectric relaxation losses in alternative dielectrics
Author :
Reisinger, H. ; Steinlesberger, G. ; Jakschik, S. ; Gutsche, M. ; Hecht, T. ; Leonhard, M. ; Schroder, U. ; Seidl, H. ; Schumann, D.
Author_Institution :
Memory Products, Infineon Technol., Dresden, Germany
Abstract :
This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of the gate dielectrics of MOSFETs. A comparison of the dielectric relaxation losses in standard insulators with those in most proposed high K dielectrics is presented.
Keywords :
DRAM chips; MOSFET; capacitors; dielectric losses; dielectric relaxation; DRAM storage capacitor; MOSFET; dielectric relaxation loss; gate dielectric; high K dielectric; insulator; Capacitors; Current measurement; Dielectric losses; Dielectric thin films; Frequency; High K dielectric materials; High-K gate dielectrics; MOSFETs; Pollution measurement; Random access memory;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979481
