A novel planar double-balanced 6-18 GHz MMIC mixers

Author

Brinlee, W.R. ; Pavio, A.M. ; Varian, K.R.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

139

Lastpage

142

Abstract

A novel planar monolithic double-balanced mixer has been demonstrated which exhibits low conversion loss, good compression and isolation characteristics, and low spurious responses. This has been achieved for LO and RF signals in the 6 to 18 GHz frequency range with an IF bandwidth from DC to 2.5 GHz. It is fabricated using standard 0.5 /spl mu/m MESFET technology on ion-implanted low-noise, low-current GaAs material. Occupying a size of only 0.050/spl times/0.100/spl times/0.006 in. (1.27/spl times/2.54/spl times/0.15 mm), it is the smallest known planar double-balanced MMIC mixer to accomplish this level of performance.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; mixers (circuits); 0.5 micron; 2.5 GHz; 6 to 18 GHz; GaAs; MESFET technology; MMIC mixers; SHF; ion-implanted GaAs material; monolithic; planar double-balanced mixers; Bandwidth; Coupling circuits; Diodes; Gallium arsenide; Impedance matching; MESFETs; MIM capacitors; MMICs; Mixers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332118

Filename

332118