DocumentCode
2165615
Title
A compact model for rapidly shrinking MOSFETs
Author
Chenming Hu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.
Keywords
MOSFET; SPICE; semiconductor device models; BSIM SPICE model; Berkeley short-channel IGFET model; MOSFET; circuit simulation; compact model; device scaling; Circuit simulation; Differential equations; Electrons; MOSFETs; Poisson equations; SPICE; Schrodinger equation; Special issues and sections; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979485
Filename
979485
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