Title :
A compact model for rapidly shrinking MOSFETs
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.
Keywords :
MOSFET; SPICE; semiconductor device models; BSIM SPICE model; Berkeley short-channel IGFET model; MOSFET; circuit simulation; compact model; device scaling; Circuit simulation; Differential equations; Electrons; MOSFETs; Poisson equations; SPICE; Schrodinger equation; Special issues and sections; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979485
