Title :
Gate current: Modeling, /spl Delta/L extraction and impact on RF performance
Author :
van Langevelde, R. ; Scholten, A.J. ; Duffy, R. ; Cubaynes, F.N. ; Knitel, M.J. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.
Keywords :
CMOS integrated circuits; integrated circuit modelling; CMOS technology; RF characteristics; gate current; gate leakage model; gate length; parameter extraction; Channel bank filters; Charge carrier processes; Current measurement; Electrons; Intrusion detection; MOS devices; Radio frequency; Tunneling; Virtual manufacturing; Voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979486
