DocumentCode
2165675
Title
A general partition scheme for gate leakage current suitable for MOSFET compact models
Author
Wei-Kai Shih ; Rios, R. ; Packan, P. ; Mistry, K. ; Abbott, T.
Author_Institution
Technol. CAD, Intel Corp., Santa Clara, CA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
For the first time, it is rigorously shown that the source/drain partition of gate leakage current in a MOSFET is identical to that of inversion charge. This paper provides model developers a general recipe in addressing the partition issue and enables more consistent model parameter extraction methodology for MOSFETs in sub-100 nm technology.
Keywords
MOSFET; leakage currents; semiconductor device models; MOSFET; compact models; current continuity equation; gate leakage current; inversion charge; model parameter extraction methodology; source/drain partition; strong tunneling regime; sub-100 nm technology; weak tunneling regime; Educational institutions; Equations; Gate leakage; Green´s function methods; Intrusion detection; Leakage current; MOSFET circuits; Surface treatment; Telephony; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979487
Filename
979487
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