• DocumentCode
    2165742
  • Title

    Analytical model for intrinsic carrier concentration in (101)-biaxially strained Si

  • Author

    Hu, Hui-Yong ; Tian-Jiao, Wang ; Zhang, He-Ming ; Song, Jian-Jun

  • Author_Institution
    Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi´´an, China
  • fYear
    2010
  • fDate
    4-6 Dec. 2010
  • Firstpage
    1864
  • Lastpage
    1866
  • Abstract
    By analyzing the band structure of strained Si/(101) Si1−xGex, the relationship of whose intrinsic carrier concentration (ni) between Ge fraction (x) and temperature were obtained. And then, the model for the intrinsic carrier concentration of strained Si/(101) Si1−xGex was established. The results show that increases significantly due to the effect of the strain in strained Si/(101)Si1−xGex, the density of state effective masses decrease with increasing Ge fraction (x), and is directly proportional to temperature.
  • Keywords
    Analytical models; Charge carrier processes; Effective mass; Photonic band gap; Silicon; Strain; effective densities of states; intrinsic carrier concentration; strained Si;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Science and Engineering (ICISE), 2010 2nd International Conference on
  • Conference_Location
    Hangzhou, China
  • Print_ISBN
    978-1-4244-7616-9
  • Type

    conf

  • DOI
    10.1109/ICISE.2010.5691930
  • Filename
    5691930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2165742