A novel SCR macromodel for ESD circuit simulation

Author

Juliano, P.A. ; Rosenbaum, E.

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Modeling the circuit behavior of electrostatic discharge (ESD) protection devices under typical ESD stress transients is critical to understanding ESD protection circuit behavior. We present a novel macromodel which greatly reduces the time and effort required to develop circuit simulation models of SCR (silicon controlled rectifier) structures. Simulation results using the SCR macromodel to model LVTSCR behavior under both HBM and CDM stress are presented.

Keywords

CMOS integrated circuits; circuit simulation; electrostatic discharge; equivalent circuits; integrated circuit modelling; protection; semiconductor device models; thyristors; transient analysis; CDM stress; ESD circuit simulation; ESD protection circuit behavior; HBM stress; LVTSCR behavior; SCR macromodel; circuit simulation models; electrostatic discharge; low voltage triggering SCR; parameter extraction procedure; quasi-static behavior; silicon controlled rectifier structures; Cathodes; Circuit simulation; Circuit testing; Convergence; Electrical resistance measurement; Electrostatic discharge; Parameter extraction; Protection; Stress; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979499

Filename

979499