Title :
Two-dimensional simulations of the parasitic edge conduction in deep submicron fully depleted SOI NMOS devices
Author :
Faynot, O. ; Raynaud, C. ; Rivallin, P. ; Pelioie, J.L.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
This paper presents a simulation analysis of the edge device for a deep sub-micron fully depleted SOI technology. The influences of the doping level, of the remaining LOCOS oxide and of the LOCOS shape on the lateral conduction are presented. Using the results of this analysis, a LOCOS process has been developed and a tilted implant has been used to overdope the silicon film located below the bird´s beak
Keywords :
MIS devices; isolation technology; oxidation; semiconductor device models; semiconductor doping; silicon-on-insulator; LOCOS; bird´s beak; deep submicron fully depleted SOI NMOS device; doping; lateral conduction; parasitic edge conduction; silicon film; tilted implant; two-dimensional simulation; Boron; CMOS technology; Conductive films; Doping; Lead compounds; MOS devices; MOSFET circuits; Semiconductor films; Silicon; Threshold voltage;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634951
