Title :
Semiconductor technologies for high speed optical networking
Author :
Chen, Y.K. ; Baeyens, Y. ; Liu, C.-T. ; Kopf, R. ; Hamm, R. ; Chen, C. ; Yang, Y. ; Frackoviak, J. ; Tate, A. ; Paschke, P. ; Weiner, J. ; Georgiou, G. ; Roux, P. ; Houstma, V.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
For high speed TDM optical links, high speed physical layer electronics provides critical interface between the local electronic data traffic and high speed optoelectronic devices. We examine the impact of several high speed compound semiconductor IC technologies such as SiGe, GaAs, and InP, on the performance of optoelectronic transceivers at data rate of 40 Gbps and 100+ Gbps regime. In this paper, we utilize a 40 Gbps optoelectronics transceiver as an example to illustrate the advantages and limitations of these compound semiconductor IC technologies.
Keywords :
Ge-Si alloys; HEMT integrated circuits; application specific integrated circuits; bipolar integrated circuits; data communication; digital communication; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit technology; integrated optoelectronics; optical communication equipment; time division multiplexing; transceivers; 100 Gbit/s; 40 Gbit/s; GaAs; HBT; HEMT; InP; SiGe; high speed ASICs; high speed TDM optical links; high speed compound semiconductor IC technologies; high speed optical networking; high speed optoelectronic devices; high speed physical layer electronics; optoelectronic transceivers; High speed integrated circuits; High speed optical techniques; Optical fiber communication; Optical fiber networks; Optoelectronic devices; Physical layer; Silicon germanium; Telecommunication traffic; Time division multiplexing; Transceivers;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979503
