DocumentCode :
2165885
Title :
Alternative Architectures of SOI MOSFET for Improving DC and Microwave Characteristics
Author :
Dehan, M. ; Vanhoenacker, D. ; Raskin, J.P.
Author_Institution :
Microwave Laboratory, Université catholique de Louvain, Place du Levant, 3, B-1348 Louvain-la-Neuve, BELGIUM
fYear :
2001
fDate :
24-26 Sept. 2001
Firstpage :
1
Lastpage :
4
Abstract :
DC and high frequency characteristics of innovative SOI MOSFET´s such as graded channel and dynamic threshold voltage MOS are presented in this paper. These architectures are very promising for high frequency low power low voltage analog applications.
Keywords :
Calibration; Coplanar waveguides; Doping profiles; Frequency; Integrated circuit technology; Laboratories; MOSFET circuits; Microwave technology; Silicon on insulator technology; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2001. 31st European
Conference_Location :
London, England
Type :
conf
DOI :
10.1109/EUMA.2001.339126
Filename :
4140194
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2165885
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