DocumentCode
2165885
Title
Alternative Architectures of SOI MOSFET for Improving DC and Microwave Characteristics
Author
Dehan, M. ; Vanhoenacker, D. ; Raskin, J.P.
Author_Institution
Microwave Laboratory, Université catholique de Louvain, Place du Levant, 3, B-1348 Louvain-la-Neuve, BELGIUM
fYear
2001
fDate
24-26 Sept. 2001
Firstpage
1
Lastpage
4
Abstract
DC and high frequency characteristics of innovative SOI MOSFET´s such as graded channel and dynamic threshold voltage MOS are presented in this paper. These architectures are very promising for high frequency low power low voltage analog applications.
Keywords
Calibration; Coplanar waveguides; Doping profiles; Frequency; Integrated circuit technology; Laboratories; MOSFET circuits; Microwave technology; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. 31st European
Conference_Location
London, England
Type
conf
DOI
10.1109/EUMA.2001.339126
Filename
4140194
Link To Document