Author :
Racanelli, M. ; Schuegraf, K. ; Kalburge, A. ; Kar-Roy, A. ; Shen, B. ; Hu, C. ; Chapek, D. ; Howard, D. ; Quon, D. ; Wang, F. ; U´ren, G. ; Lao, L. ; Tu, H. ; Zheng, J. ; Zhang, J. ; Bell, K. ; Yin, K. ; Joshi, P. ; Akhtar, S. ; Vo, S. ; Lee, T. ; Shi, W
Author_Institution :
Silicon RF Platform Technol., Conexant Syst. Inc., Newport Beach, CA, USA
Abstract :
A scalable SiGe NPN demonstrating Ft*BVceo product of 340 GHz-V with Ft of 170 GHz and BVceo of 2.0 V together with Fmax of 160 GHz is presented. Peak Ft is reached at a relatively low current density of 6 mA//spl mu/m/sup 2/. The device is integrated in a 0.18 /spl mu/m BiCMOS process with dual-gate MOS transistors, high voltage NPN transistors, MIM capacitors, metal resistors, and 6 layers of metal including two layers of thick Cu for improved interconnect and inductor performance.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; high-speed integrated circuits; integrated circuit technology; microwave bipolar transistors; semiconductor materials; 0.18 micron; 160 GHz; 170 GHz; 2 V; Cu; Cu interconnect; HV n-p-n transistors; MIM capacitors; SiGe; advanced BiCMOS technology; dual-gate MOS transistors; high voltage NPN transistors; metal resistors; scalable SiGe NPN; thick Cu layers; ultra high speed SiGe NPN; BiCMOS integrated circuits; CMOS technology; Current density; Germanium silicon alloys; Implants; MIM capacitors; MOSFETs; Resistors; Silicon germanium; Voltage;
