Ultra high speed SiGe NPN for advanced BiCMOS technology

Author

Racanelli, M. ; Schuegraf, K. ; Kalburge, A. ; Kar-Roy, A. ; Shen, B. ; Hu, C. ; Chapek, D. ; Howard, D. ; Quon, D. ; Wang, F. ; U´ren, G. ; Lao, L. ; Tu, H. ; Zheng, J. ; Zhang, J. ; Bell, K. ; Yin, K. ; Joshi, P. ; Akhtar, S. ; Vo, S. ; Lee, T. ; Shi, W

Author_Institution

Silicon RF Platform Technol., Conexant Syst. Inc., Newport Beach, CA, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

A scalable SiGe NPN demonstrating Ft*BVceo product of 340 GHz-V with Ft of 170 GHz and BVceo of 2.0 V together with Fmax of 160 GHz is presented. Peak Ft is reached at a relatively low current density of 6 mA//spl mu/m/sup 2/. The device is integrated in a 0.18 /spl mu/m BiCMOS process with dual-gate MOS transistors, high voltage NPN transistors, MIM capacitors, metal resistors, and 6 layers of metal including two layers of thick Cu for improved interconnect and inductor performance.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; high-speed integrated circuits; integrated circuit technology; microwave bipolar transistors; semiconductor materials; 0.18 micron; 160 GHz; 170 GHz; 2 V; Cu; Cu interconnect; HV n-p-n transistors; MIM capacitors; SiGe; advanced BiCMOS technology; dual-gate MOS transistors; high voltage NPN transistors; metal resistors; scalable SiGe NPN; thick Cu layers; ultra high speed SiGe NPN; BiCMOS integrated circuits; CMOS technology; Current density; Germanium silicon alloys; Implants; MIM capacitors; MOSFETs; Resistors; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979506

Filename

979506