A monolithic HEMT regulated self-biased LNA

Author

Kobayashi, K.W. ; Esfandiari, R. ; Nelson, B. ; Minot, K. ; Jones, W. ; Biendenbender, M. ; Lai, R. ; Tan, K.L. ; Berenz, J.B.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

121

Lastpage

124

Abstract

This work benchmarks the first demonstration of a monolithic HEMT LNA design which incorporates active regulated self-bias. The HEMT LNA bias current can be maintained to within /spl plusmn/3% variation over a process threshold variation (Vgs) of /spl plusmn/0.5 Volt. The bias circuitry regulates the bias current to within 1.5% over a 100/spl deg/C temperature range. The amplifier has a nominal gain of 10 dB and a noise figure of 2.5 dB over a 1-10 GHz bandwidth. Across several wafers with a threshold voltage spread of 0.5 Volts, the active bias-regulated LNA maintains repeatable gain and noise figure which varies by less than 1 dB and 0.75 dB respectively. This monolithic regulated self-biased LNA demonstration sheds new light on the producibility and reliability of HEMT MMICs and their applications.<>

Keywords

MMIC; circuit reliability; field effect integrated circuits; microwave amplifiers; 1 to 10 GHz; 10 dB; 2.5 dB; MMICs; active regulated self-bias; bias current; monolithic HEMT LNA design; process threshold variation; producibility; reliability; threshold voltage spread; Circuits; HEMTs; Low-noise amplifiers; MMICs; Noise figure; Regulators; Space technology; Temperature; Threshold voltage; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332129

Filename

332129