DocumentCode
2165907
Title
A new nonlinear circuit model for GaAs Gunn diode in oscillator
Author
Liang, Li ; Bo, Zhang
Author_Institution
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu
fYear
2008
fDate
2-5 Nov. 2008
Firstpage
1306
Lastpage
1309
Abstract
An innovative nonlinear circuit model for Gunn diode in oscillator is introduced based on the physical mechanism of Gunn diode. This model interprets the nonlinear harmonics character of Gunn diode. The simulation prediction and experiment of nonlinear model show feasibility of the nonlinear circuit model for Gunn diode in oscillator.
Keywords
Gunn diodes; Gunn oscillators; III-V semiconductors; gallium arsenide; harmonics; GaAs; Gunn diode; nonlinear circuit model; nonlinear harmonics character; oscillator; Current density; Electrons; Gallium arsenide; Gunn devices; Nonlinear circuits; Oscillators; Physics; Poisson equations; Predictive models; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on
Conference_Location
Kunming
Print_ISBN
978-1-4244-2192-3
Electronic_ISBN
978-1-4244-2193-0
Type
conf
DOI
10.1109/ISAPE.2008.4735465
Filename
4735465
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