DocumentCode :
2165907
Title :
A new nonlinear circuit model for GaAs Gunn diode in oscillator
Author :
Liang, Li ; Bo, Zhang
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu
fYear :
2008
fDate :
2-5 Nov. 2008
Firstpage :
1306
Lastpage :
1309
Abstract :
An innovative nonlinear circuit model for Gunn diode in oscillator is introduced based on the physical mechanism of Gunn diode. This model interprets the nonlinear harmonics character of Gunn diode. The simulation prediction and experiment of nonlinear model show feasibility of the nonlinear circuit model for Gunn diode in oscillator.
Keywords :
Gunn diodes; Gunn oscillators; III-V semiconductors; gallium arsenide; harmonics; GaAs; Gunn diode; nonlinear circuit model; nonlinear harmonics character; oscillator; Current density; Electrons; Gallium arsenide; Gunn devices; Nonlinear circuits; Oscillators; Physics; Poisson equations; Predictive models; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on
Conference_Location :
Kunming
Print_ISBN :
978-1-4244-2192-3
Electronic_ISBN :
978-1-4244-2193-0
Type :
conf
DOI :
10.1109/ISAPE.2008.4735465
Filename :
4735465
Link To Document :
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