A 25 ohm, 2W, 8-14 GHz HBT power MMIC with 20 dB gain and 40% power added efficiency

Author

Ali, F. ; Gupta, A. ; Salib, M. ; Veasel, B. ; Dawson, D.

Author_Institution

Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

113

Lastpage

115

Abstract

A two-stage, 8-14 GHz high efficiency AlGaAs/GaAs HBT MIMIC power amplifier has been designed and tested. At 7 V collector bias, this common-emitter monolithic amplifier has achieved 20 dB gain, 33 dBm (CW) output power and 40% power added efficiency over 8-14 GHz band. The amplifier is designed for a 25 ohm input and output impedance and all the matching networks, as well as biasing circuits, are contained within this HBT MMIC. To our knowledge, this is the highest efficiency, the highest gain and the highest output power reported for any monolithic power amplifier covering 6 GHz bandwidth in the X-Ku band.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; microwave amplifiers; power amplifiers; 2 W; 20 dB; 25 ohm; 40 percent; 6 GHz; 8 to 14 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT; HBT power MMIC; X-Ku band; biasing circuits; common-emitter monolithic amplifier; matching networks; output power; power added efficiency; power amplifier; Bandwidth; Circuit testing; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; MMICs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332131

Filename

332131