Title :
A novel MMIC biphase modulator with variable gain using enhancement-mode FETS suitable for 3 V wireless applications
Author :
Goldfarb, M. ; Cole, J.B. ; Platzker, A.
Author_Institution :
Res. Div., Raytheon Co., Lexington, MA, USA
Abstract :
A circuit topology for realizing a BPSK (180 degree) modulator without the use of reactive phase determining networks is presented for the first time. This physically small circuit employs a trio of enhancement mode MESFETs which are uniquely configured to extend the upper frequency response of the design to in excess of 1.7 GHz. This approach is particularly noteworthy as it is implemented using less than 3 V dc and precludes the need for negative gate voltages making it attractive for use in wireless applications.<>
Keywords :
MMIC; field effect integrated circuits; frequency response; microwave amplifiers; modulators; phase shift keying; power amplifiers; 1.7 GHz; 3 V; BPSK; MMIC biphase modulator; circuit topology; enhancement mode MESFETs; enhancement-mode FETS; physically small circuit; upper frequency response; variable gain; wireless applications; Bandwidth; Binary phase shift keying; Circuits; FETs; Frequency; Gain; MMICs; Parasitic capacitance; Phase modulation; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332134
