Title :
Design and analysis of a novel mixed accumulation/inversion mode FD SOI MOSFET
Author :
Daun, F.L. ; Ioannou, D.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
In this paper, a new fully-depleted SOI MOSFET device is designed and analyzed, which combines the advantages of both the inversion mode and the accumulation mode devices: its performance is better than the inversion mode device, and its breakdown voltage higher than the accumulation mode device. Additionally, the new device results in better hot carrier reliability
Keywords :
MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; breakdown voltage; hot carrier reliability; mixed accumulation/inversion mode fully-depleted SOI MOSFET; Application software; Doping; Electric breakdown; Hot carriers; MOSFET circuits; Power engineering and energy; Power engineering computing; Silicon; Threshold voltage; Transconductance;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634952
