Title :
Wide bandgap semiconductor devices and MMICs for RF power applications
Author :
Palmour, J.W. ; Sheppard, S.T. ; Smith, R.P. ; Allen, S.T. ; Pribble, W.L. ; Smith, T.J. ; Ring, Z. ; Sumakeris, J.J. ; Saxler, A.W. ; Milligan, J.W.
Author_Institution :
Cree, Inc., Durham, NC, USA
Abstract :
High power densities of 5.2 W/mm and 63% power added efficiency (PAE) have been demonstrated for SiC MESFETs at 3.5 GHz. Wide bandwidth MMICs have also been demonstrated with SiC MESFETs, yielding 37 W at 3.5 GHz. Even higher power densities have been obtained with GaN HEMTs, showing up to 12 W/mm under pulsed conditions. Hybrid amplifiers using GaN HEMTs on SiC substrates have demonstrated a pulsed output power level of 50.1 W, with 8 dB gain and PAE of 28% at 10 GHz, and CW power levels of 36 W have also been obtained. A wide bandwidth GaN MMIC amplifier had a peak pulsed power level of 24.2 watts, with a gain of 12.8 dB and PAE of 22% at 16 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; field effect MMIC; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; 10 GHz; 12.8 dB; 16 GHz; 22 percent; 24.2 W; 28 percent; 3.5 GHz; 36 W; 37 W; 50.1 W; 63 percent; 8 dB; CW power levels; GaN; HEMTs; MESFETs; PAE; RF power applications; SiC; peak pulsed power level; power added efficiency; power densities; pulsed conditions; pulsed output power level; wide bandgap semiconductor devices; wide bandwidth MMICs; Bandwidth; Gallium nitride; HEMTs; MESFETs; MMICs; Power amplifiers; Pulse amplifiers; Radio frequency; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979517
