Title :
A low-power GaAs MESFET dual-modulus prescaler
Author :
Kanan, R. ; Hochet, B. ; Kaess, F. ; Declercq, M.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
31 May-3 Jun 1998
Abstract :
A structure for a high speed low-power GaAs dual-modulus frequency divider is presented in this paper. By using a new flip-flop, simulations predict a lower power consumption than previously reported CMOS and GaAs circuits. The prescaler has been fabricated with a standard 0.6 μm MESFET technology verifying the expected low power dissipation
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect logic circuits; flip-flops; frequency dividers; gallium arsenide; prescalers; 0.6 micron; GaAs; MESFET ICs; dual-modulus prescaler; flip-flop; frequency divider; low-power circuits; power consumption; CMOS technology; Counting circuits; Energy consumption; Flip-flops; Frequency; Gallium arsenide; Inverters; MESFETs; Master-slave; Power dissipation;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.706874
