Title :
HEMT MMIC chip set for low cost miniaturized EHF SATCOM transceiver
Author :
Lester, J.A. ; Huang, P. ; Ahmadi, M. ; DuFault, M. ; Ingram, D. ; Chen, T.H. ; Garske, D. ; Chow, P.D.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Presented is a set of passivated pseudomorphic InGaAs HEMT MMICs for insertion into a low cost miniaturized transceiver for EHF SATCOM terminal applications. A 20 GHz MMIC balanced LNA with 1.8 dB noise figure and 31 dB gain, a K-Band downconverter, and a 22 GHz doubler chain are for insertion into the receiving subsystem. The 22 GHz doubler chain, a 44 GHz doubler chain, and a 44 GHz driver amplifier with +21 dBm of output power are for insertion into the upconverter-transmitter subsystem. The 22 GHz doubler chain and 44 GHz driver amplifier feature couplers and diode detectors integrated on-chip for built-in-test (BIT) application.<>
Keywords :
III-V semiconductors; MMIC; built-in self test; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; power amplifiers; transceivers; 20 GHz; 22 GHz; 31 dB; 44 GHz; EHF SATCOM terminal applications; EHF SATCOM transceiver; HEMT MMIC chip; InGaAs; K-Band downconverter; MMIC balanced LNA; built-in-test; couplers; diode detectors; doubler chain; driver amplifier; integrated on-chip; low cost; low cost miniaturized transceiver; miniaturized; noise figure; passivated pseudomorphic InGaAs HEMT MMICs; receiving subsystem; upconverter-transmitter subsystem; Costs; Driver circuits; Gain; HEMTs; Indium gallium arsenide; K-band; MMICs; Noise figure; Power amplifiers; Transceivers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332137
