Title :
High performance MMICs in coplanar waveguide technology for commercial V-band and W-band applications
Author :
Schlechtweg, M. ; Reinert, W. ; Bangert, A. ; Braunstein, J. ; Tasker, P.J. ; Bosch, R. ; Haydl, W.H. ; Bronner, W. ; Hulsmann, A. ; Kohler, K. ; Seibel, J. ; Yu, R. ; Rodwell, M.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
We have designed and fabricated a family of coplanar MMICs based on a 0.16 /spl mu/m gate length pseudomorphic MODFET technology which cover the 63-64 GHz and 76-77 GHz frequency bands allocated for automotive applications in Europe. The realized circuits comprise a 3-stage low noise amplifier (LNA) with 21 dB gain and 6.2 dB noise figure at 77 GHz, a 2-stage medium power amplifier (MPA) with 28 mW saturated output power at 77 GHz and more than 9.5 dB gain from 70 to 80 GHz, a FET mixer working from 63 to 78 GHz with a conversion loss of 2.5 dB and a noise figure of 14 dB at 64 GHz, and an oscillator with 8 mW output power at 75 GHz.<>
Keywords :
MMIC; automotive electronics; field effect integrated circuits; microwave amplifiers; microwave oscillators; mixers (circuits); power amplifiers; 0.16 mum; 2-stage medium power amplifier; 2.5 dB; 21 dB; 28 mW; 3-stage low noise amplifier; 63 to 64 GHz; 76 to 77 GHz; 8 mW; Europe; FET mixer; W-band applications; automotive applications; commercial V-band; conversion loss; coplanar MMICs; coplanar waveguide technology; frequency bands; gate length; high performance MMICs; noise figure; oscillator; output power; pseudomorphic MODFET technology; saturated output power; Automotive applications; Coplanar waveguides; Gain; HEMTs; Low-noise amplifiers; MMICs; MODFET circuits; Noise figure; Power generation; Radio spectrum management;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332138
