The high frequency and power performance of SiGe HBTs with SIC structure at cryogenic temperature

Author

Hsieh, M.W. ; Liang, K.H. ; Chan, Y.-J. ; Lee, C.Y. ; Chen, G.J. ; Tang, Denny D L

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2005

fDate

12-17 June 2005

Abstract

The high-frequency behavior and power capability of SiGe HBTs with selectively implanted collector structure have been measured at temperature between 77 and 350 K. Detailed analyses of temperature dependence on dc, high-frequency parameters, and power performances are presented. An HBT transit-time analysis is also described to find out the factors causing the increase in cutoff frequency (f_T) at low temperature operation of different functionality of devices. In addition, the power capability of enhanced-breakdown device at liquid-nitrogen temperature is severely degraded.

Keywords

Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor materials; 77 to 350 K; HBT high frequency behavior; HBT power performance; HBT transit-time analysis; SiGe; cryogenic temperature; cutoff frequency increase; enhanced-breakdown device; heterojunction bipolar transistors; high-frequency parameters; liquid-nitrogen temperature; low temperature operation; selectively implanted collector structure; temperature dependence; Cryogenics; Frequency; Germanium silicon alloys; Performance analysis; Performance evaluation; Power measurement; Silicon carbide; Silicon germanium; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1517199

Filename

1517199