Title :
A 3.5 W HBT MMIC power amplifier module for mobile communications
Author :
Sakuno, K. ; Akagi, M. ; Sato, H. ; Miyauchi, M. ; Hasegawa, M. ; Yoshimasu, T. ; Hara, S.
Author_Institution :
Sharp Corp., Nara, Japan
Abstract :
A 900 MHz-band GaAs/GaAlAs HBT MMIC power amplifier module has been developed for mobile communications by using a novel assembly technique called BHS and an AlN package as the MMIC chip carrier. The power module gave a peak output power of 3.7 W and a power-added efficiency of 54.5% with a +6 V single supply voltage.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; mobile radio systems; modules; packaging; power amplifiers; power integrated circuits; ultra-high-frequency amplifiers; 3.5 W; 3.7 W; 54.5 percent; 6 V; 900 MHz; AlN; AlN package; BHS; GaAs-GaAlAs; HBT MMIC power amplifier module; MMIC chip carrier; UHF IC; assembly technique; mobile communications; single supply voltage; Assembly; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Mobile communication; Multichip modules; Packaging; Power amplifiers; Power generation; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332141
