DocumentCode
2166257
Title
A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones
Author
Makioka, S. ; Tateoka, K. ; Yuri, M. ; Yoshikawa, N. ; Kanazawa, K.
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fYear
1994
fDate
22-25 May 1994
Firstpage
51
Lastpage
54
Abstract
A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P/sub 1dB/ of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the MCM structure and on-chip ferroelectric capacitors has successfully reduced the GaAs total chip area to be 1.1 mm/sup 2/.<>
Keywords
III-V semiconductors; MMIC; cordless telephone systems; digital radio systems; gallium arsenide; microwave amplifiers; multichip modules; power amplifiers; ultra-high-frequency amplifiers; 1.9 GHz; 3.6 V; 40.2 percent; GaAs; MCM power amplifier; UHF; digital cordless telephones; on-chip ferroelectric capacitors; Binary search trees; FETs; Feedback circuits; Ferroelectric materials; Frequency; Gallium arsenide; High power amplifiers; Low voltage; MIM capacitors; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-1418-2
Type
conf
DOI
10.1109/MCS.1994.332144
Filename
332144
Link To Document