Title :
Low power 23-GHz and 27-GHz distributed cascode amplifiers in a standard 130nm SOI CMOS process
Author :
Pavageau, C. ; Siligaris, A. ; Picheta, L. ; Danneville, F. ; Si Moussa, M. ; Raskin, J.P. ; Vanhoenaker-Janvier, D. ; Russat, J. ; Fel, N.
Author_Institution :
CNRS, Villeneuve d´´Ascq, France
Abstract :
Two fully integrated distributed amplifiers (DA) were designed using a standard 130 nm partially-depleted silicon-on-insulator CMOS process. They make use of either body-contacted (BC) or floating-body (FB) MOSFETs, and microstrip lines. The BC-DA has a 5.4 dB gain and a unity-gain bandwidth of 23 GHz whereas the FB-DA has a 6.8 dB gain and a unity-gain bandwidth of 27 GHz. The measured output power at 1 dB compression is 5 dBm at 5 GHz and the noise figure is 6.5-7.5 dB over 6-18 GHz for both DAs. Power consumption is 58 mW at 1.4 V.
Keywords :
CMOS analogue integrated circuits; distributed amplifiers; low-power electronics; microstrip lines; microwave amplifiers; microwave integrated circuits; silicon-on-insulator; 1.4 V; 130 nm; 23 GHz; 27 GHz; 5 GHz; 5.4 dB; 58 mW; 6 to 18 GHz; 6.5 to 7.5 dB; 6.8 dB; MMIC; SOI CMOS process; body-contacted MOSFET; distributed cascode amplifiers; floating-body MOSFET; microstrip lines; silicon on insulator; unity-gain bandwidth; Bandwidth; CMOS process; Distributed amplifiers; Gain; MOSFETs; Microstrip; Noise measurement; Power generation; Power measurement; Silicon on insulator technology;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517200
