DocumentCode
2166308
Title
Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers
Author
Tkachenko, Y. ; Wei, C. ; Sprinkle, S. ; Gering, J. ; Lee, J. ; Kao, T. ; Ho, Y.Zhao W. ; Sun, M. ; Bartle, D.
Author_Institution
Alpha Industries. Inc., 20 Sylvan Rd, Woburn, MA 01801 and 1230 Bordeaux Dr, Sunnyvale, CA 94089, Tel: 781-935-5150, E-mail: gtkachenko@alphaind.com
fYear
2001
fDate
24-26 Sept. 2001
Firstpage
1
Lastpage
4
Abstract
Performance of an HBT and a Quasi Enhancement Mode PHEMT (QE-PHEMT) unit cell is compared for wireless telephone PA applications. While the HBT has advantages of smaller chip size and single supply with no drain switch operation, the QE-PHEMT has higher efficiency and better low voltage characteristics. PA power control and device design trade-offs for both technologies are also discussed.
Keywords
Circuits; Heterojunction bipolar transistors; High power amplifiers; Impedance; PHEMTs; Power supplies; Radio frequency; Stability; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. 31st European
Conference_Location
London, England
Type
conf
DOI
10.1109/EUMA.2001.339140
Filename
4140208
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