Title :
A W-band multifunction MMIC
Author :
Huang, H.C. ; Laux, P. ; Bass, J.F. ; Chen, S.W. ; Lee, T.T. ; Tadayon, S. ; Singer, J.L. ; Kearney, J. ; Aina, O.A.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
A 94-GHz multifunction monolithic microwave integrated circuit (MMIC) incorporating two different materials on the same chip has been developed. This MMIC contains a three-stage pseudomorphic high-electron mobility transistor (P-HEMT) low-noise amplifier (LNA) and a balanced gallium arsenide (GaAs) Schottky diode mixer. The MMIC achieved a 7-dB conversion gain-with 7.3-dB noise figure over the 93- to 94.5-GHz band. It was fabricated using vacuum passivation technology for the LNA to alleviate possible traps at the SiN-GaAs interface. The technology for incorporating two different materials on the same chip is sufficiently flexible to be applied to analog/digital ICs and microwave/optical optoelectronic ICs as well. This is believed to be the first report of a W-band multifunction MMIC having different materials on the same chip.<>
Keywords :
MMIC; Schottky-barrier diodes; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated circuit technology; microwave amplifiers; mixers (circuits); passivation; silicon compounds; 7 dB; 7.3 dB; 93 to 94.5 GHz; 94 GHz; EHF; LNA; MIMIC; MM-wave IC; Schottky diode mixer; Si/sub 3/N/sub 4/-GaAs; W-band; high-electron mobility transistor; low-noise amplifier; monolithic microwave integrated circuit; multifunction MMIC; pseudomorphic HEMT; three-stage amplifier; vacuum passivation technology; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Microwave transistors; Monolithic integrated circuits; Optical materials; PHEMTs;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332147
