DocumentCode :
2166501
Title :
Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics
Author :
Gosele, U. ; Alexe, M. ; Kopperschmidt, P. ; Tong, Q.-Y.
Author_Institution :
Max-Planck-Inst. of Microstruct. Phys., Halle, Germany
Volume :
1
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
23
Abstract :
The wafer bonding approach, originally developed mostly for the fabrication of silicon-on-insulator (SOI) substrates, has matured to a flexible technology giving access to materials combinations with applications far beyond the original area of SOI substrates. The paper will first review our present understanding of silicon-silicon wafer bonding and then proceed to bonding of dissimilar wafers and various thinning approaches including that associated with hydrogen implantation. Finally, low temperature wafer bonding approaches such as room temperature wafer bonding under ultra high vacuum conditions will be discussed
Keywords :
ion implantation; micromechanical devices; optical fabrication; silicon-on-insulator; wafer bonding; SOI substrate fabrication; Si; hydrogen implantation; low temperature wafer bonding; microelectronics; micromechanics; optoelectronics; room temperature wafer bonding; semiconductor wafer bonding; silicon-silicon wafer bonding; thinning; ultra high vacuum; Crystalline materials; Crystallization; Microelectronics; Optical materials; Semiconductor materials; Silicon; Substrates; Surface treatment; Temperature; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651544
Filename :
651544
Link To Document :
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