• DocumentCode
    2166501
  • Title

    Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics

  • Author

    Gosele, U. ; Alexe, M. ; Kopperschmidt, P. ; Tong, Q.-Y.

  • Author_Institution
    Max-Planck-Inst. of Microstruct. Phys., Halle, Germany
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    23
  • Abstract
    The wafer bonding approach, originally developed mostly for the fabrication of silicon-on-insulator (SOI) substrates, has matured to a flexible technology giving access to materials combinations with applications far beyond the original area of SOI substrates. The paper will first review our present understanding of silicon-silicon wafer bonding and then proceed to bonding of dissimilar wafers and various thinning approaches including that associated with hydrogen implantation. Finally, low temperature wafer bonding approaches such as room temperature wafer bonding under ultra high vacuum conditions will be discussed
  • Keywords
    ion implantation; micromechanical devices; optical fabrication; silicon-on-insulator; wafer bonding; SOI substrate fabrication; Si; hydrogen implantation; low temperature wafer bonding; microelectronics; micromechanics; optoelectronics; room temperature wafer bonding; semiconductor wafer bonding; silicon-silicon wafer bonding; thinning; ultra high vacuum; Crystalline materials; Crystallization; Microelectronics; Optical materials; Semiconductor materials; Silicon; Substrates; Surface treatment; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651544
  • Filename
    651544