DocumentCode
2166501
Title
Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics
Author
Gosele, U. ; Alexe, M. ; Kopperschmidt, P. ; Tong, Q.-Y.
Author_Institution
Max-Planck-Inst. of Microstruct. Phys., Halle, Germany
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
23
Abstract
The wafer bonding approach, originally developed mostly for the fabrication of silicon-on-insulator (SOI) substrates, has matured to a flexible technology giving access to materials combinations with applications far beyond the original area of SOI substrates. The paper will first review our present understanding of silicon-silicon wafer bonding and then proceed to bonding of dissimilar wafers and various thinning approaches including that associated with hydrogen implantation. Finally, low temperature wafer bonding approaches such as room temperature wafer bonding under ultra high vacuum conditions will be discussed
Keywords
ion implantation; micromechanical devices; optical fabrication; silicon-on-insulator; wafer bonding; SOI substrate fabrication; Si; hydrogen implantation; low temperature wafer bonding; microelectronics; micromechanics; optoelectronics; room temperature wafer bonding; semiconductor wafer bonding; silicon-silicon wafer bonding; thinning; ultra high vacuum; Crystalline materials; Crystallization; Microelectronics; Optical materials; Semiconductor materials; Silicon; Substrates; Surface treatment; Temperature; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651544
Filename
651544
Link To Document