DocumentCode :
2166516
Title :
The temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements
Author :
Andriesh, A.M. ; Culeac, I.P. ; Ewen, P.J.S. ; Owen, A.E.
Author_Institution :
Center of Optoelectron, Inst. of Appl. Phys., Chisinau, Moldova
Volume :
1
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
45
Abstract :
The time-averaged hole drift mobility in As2S3 glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10-10 cm2/V sec at 300 K and almost temperature independent below ~130 K
Keywords :
arsenic compounds; chalcogenide glasses; hole mobility; light absorption; 77 to 330 K; As2S3; As2S3 glass; PA measurement; steady-state photoinduced absorption; temperature dependence; thermal activation; time-averaged hole drift mobility; Absorption; Charge carrier processes; Electron traps; Glass; Kinetic energy; Photonic band gap; Probes; Spontaneous emission; Steady-state; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651545
Filename :
651545
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2166516
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