Title :
Hydrogen implantation in polycrystalline ZnO thin films
Author :
Bogatu, V. ; Goldenblum, A. ; Logonfatu, B.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
Abstract :
The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals
Keywords :
II-VI semiconductors; hydrogen; ion implantation; semiconductor thin films; zinc compounds; Kaufman type ion source; ZnO:H; hydrogen ion implantation; penetration depth; polycrystalline ZnO thin film; Acceleration; Hydrogen; Ion beams; Ion implantation; Ion sources; Optical films; Plasma immersion ion implantation; Sputtering; Transistors; Zinc oxide;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651546
