Title :
Thermally stable ultra-thin nitrogen incorporated ZrO/sub 2/ gate dielectric prepared by low temperature oxidation of ZrN
Author :
Koyama, M. ; Suguro, K. ; Yoshiki, M. ; Kamimuta, Y. ; Koike, M. ; Ohse, M. ; Hongo, C. ; Nishiyama, A.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Ultra-thin nitrogen incorporated ZrO/sub 2/ (ZrON) film is successfully prepared by low temperature oxidation of ZrN. Capacitance equivalent thickness (CET) of 15 /spl Aring/ with Jg=1 mA/cm/sup 2/@ Vg=-1 V is demonstrated. There is no increase in CET up to 1000/spl deg/C. Silicide formation at poly-Si/ZrO/sub 2//Si stack at high temperature annealing is also inhibited. In addition, the boron penetration from p+ poly-Si to Si substrate is substantially suppressed.
Keywords :
MIS capacitors; annealing; dielectric thin films; elemental semiconductors; oxidation; silicon; zirconium compounds; -1 V; 0 to 1000 degC; 15 angstrom; CET; MIS capacitors; ZrO/sub 2/-Si; boron penetration; capacitance equivalent thickness; gate insulating materials; high temperature annealing; impurity diffusion; low temperature oxidation; silicide formation; thermally stable gate dielectric; Annealing; Boron; Capacitors; High K dielectric materials; High-K gate dielectrics; Leakage current; Nitrogen; Oxidation; Semiconductor films; Temperature;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979540
