DocumentCode :
2166686
Title :
Missing solder ball failure mechanisms in plastic ball grid array packages
Author :
Zhong, C.H. ; Yi, S. ; Mui, Y.C. ; Howe, C.P. ; Olsen, D. ; Chen, W.T.
Author_Institution :
Broadcom Singapore Pte. Ltd., Singapore
fYear :
2000
fDate :
2000
Firstpage :
151
Lastpage :
159
Abstract :
Plastic ball grid array packages were aged at 125 and 150°C for different time intervals from 4 to 2000 hours. Various solder ball pad metallurgy including pure Ni barrier layer (electrolytic plating) with Au protective layer from 0.48 to 1.27 μm, Ni-P barrier layer (electroless plating) with 0.48 μm Au protective layer and Ni-Co barrier layer with Au layer from 0.52 to 1.46 μm were studied. Solder ball shear test was conducted at each time interval of aging. Solder ball shear strength decreased after initial hardening stage. The deterioration of solder ball shear strength was found mainly caused by the formation of intermetallic compound (IMC) layers, together with microstructure coarsening and diffusion related porosity at the interface. Sn forms different intermetallic compound layers with different Ni barrier layer. For ball pad metallurgy in this studied, two intermetallic compound layers formed after aging. A critical Au thickness value was found between 0.48 μm to 0.7 μm for electrolytic Ni. If Au protective layer is thinner than the critical value, separate (Au, Ni)Sn4 IMC particles form on surface of Ni, Sn4. If Au layer is thicker than the critical value, a continuous (Au, Ni)Sn4 layer forms on top of Ni3Sn 4. Thick Au layer and high aging temperature result in formation of thicker (Au, Ni)Sn4 intermetallic compound layer in short time. For electrolytic Ni/Co plating, the critical Au thickness is thinner than pure electrolytic Ni plating in terms of continuous (Au, Ni, Co), Sny intermetallic compound layer formation. In shear test, fracture occurs at either interfaces or in the layer with the lowest shear strength. Once two continuous intermetallic compound layers formed, the fracture tends to occur at their interface. It was found that the bonding strength between (Au, Ni, Co),Sny and (Ni, Co)3Sn4 is higher than that between (Au, Ni)Sn4 and Ni3Sn4. For ball pad metallurgy do not form two continuous intermetallic compound layers, the shear strength decrease due to the coarsening of microstructure, intermetallic particle formation and diffusion related porosity on surface of Ni3Sn4. A Phosphorus rich layer forms at the interface between Ni3Sn4 and Ni-P barrier layer after aging, fracture at this interface is not the dominate failure mode for electroless Ni/Au metallurgy
Keywords :
ageing; ball grid arrays; failure analysis; plastic packaging; shear strength; soldering; 125 C; 150 C; Au; Au protective layer; Ni; Ni barrier layer; Ni-Co; Ni-Co barrier layer; Ni-P; Ni-P barrier layer; ageing; diffusion porosity; electroless plating; electrolytic plating; failure mode; fracture surface; hardening; intermetallic compound formation; microstructure coarsening; plastic ball grid array package; shear strength; solder ball pad metallurgy; Aging; Electronics packaging; Failure analysis; Gold; Intermetallic; Microstructure; Plastics; Protection; Testing; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-5908-9
Type :
conf
DOI :
10.1109/ECTC.2000.853139
Filename :
853139
Link To Document :
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