Title :
230-240 GHz, 30 dB Gain Amplifier in INP-HEMT for Multi-10 Gb/s Data Communication Systems
Author :
Kawano, Yoshihiro ; Matsumura, Hiroshi ; Shiba, S. ; Sato, Mitsuhisa ; Suzuki, Takumi ; Nakasha, Yasuhiro ; Takahashi, Tatsuro ; Makiyama, Kozo ; Hara, Naoya
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
In this paper, a multi-stage amplifier in 75-nm InP-HEMT technology is described. To achieve a remarkably high gain in a submillimeter waveband, feedback reduction architectures are proposed. The small signal gain of the fabricated amplifier is 30 dB around 230 GHz, and the 3-dB bandwidth is 228 to 242 GHz. The total power consumption of the amplifier was 130 mW. A modulator and an envelope detector are also implemented in the amplifier to confirm a large signal operation. When 10 Gb/s data is input to modulator, a clear eye-opening waveform from the detector output can be successfully obtained.
Keywords :
amplification; amplifiers; data communication; high electron mobility transistors; HEMT technology; bandwidth 228 GHz to 242 GHz; data communication systems; envelope detector; eye opening waveform; feedback reduction architectures; frequency 230 GHz to 240 GHz; gain 30 dB; gain amplifier; modulator; multistage amplifier; power 130 mW; power consumption; submillimeter waveband; Gain; HEMTs; Indium phosphide; Logic gates; MODFETs; Modulation; Substrates;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659181
