Title :
44 Gbit/s 4:1 multiplexer and 50 Gbit/s 2:1 multiplexer in pseudomorphic AlGaAs/GaAs-HEMT technology
Author :
Nowotny, U. ; Lao, Z. ; Thiede, A. ; Lienhart, H. ; Hornung, J. ; Kaufel, C. ; Kohler, K. ; Glorer, K.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
31 May-3 Jun 1998
Abstract :
Using our 0.2 μm AlGaAs/GaAs quantum well high electron mobility transistor (HEMT) technology, we have developed time division multiplexer chips. A 2:1 multiplexer for data rates up to 50 Gbit/s and a 4:1 multiplexer designed for easy implementation into existing fiber-optical digital transmission systems to speed up their data rates to 40 Gbit/s. Both circuits can be operated on a single power supply in the range of -3 V to -5.5 V. The power dissipation is 2.8 W and 1.7 W respectively at 4.0 V supply voltage
Keywords :
HEMT integrated circuits; III-V semiconductors; VLSI; aluminium compounds; digital communication; field effect digital integrated circuits; gallium arsenide; multiplexing equipment; optical communication equipment; time division multiplexing; -3 to -5.5 V; 0.2 micron; 1.7 W; 2.8 W; 2:1 multiplexer; 4 V; 40 to 50 Gbit/s; 4:1 multiplexer; AlGaAs-GaAs; AlGaAs/GaAs quantum well; PHEMT technology; fiber-optical digital transmission systems; high electron mobility transistor; pseudomorphic HEMT; single power supply operation; time division multiplexer chips; Circuits; Clocks; Frequency synchronization; HEMTs; Multiplexing; Optical receivers; Power supplies; Semiconductor device measurement; Signal generators; Voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.706876
