DocumentCode
2166701
Title
Indirect aluminum incorporation for N/P/N junctions formation in silicon
Author
Godignon, P. ; Morvan, E. ; Montserrat, J. ; Jordá, X. ; Vellvehi, M. ; Flores, D. ; Rebollo, J. ; Millán, J.
Author_Institution
Centro Nacional de Microelectron., Bellaterra, Spain
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
63
Abstract
This paper presents a new method for Aluminum and Arsenic inclusion into silicon based on recoil implantation. Arsenic has been implanted through an Al layer and a silicon oxide layer. Experiments consisting in implantation+annealing have been carried out in order to obtain N+/P/N-/N+ structures. The feasibility of such structures is demonstrated and the problems linked to the process are identified for a further optimization of the technology
Keywords
aluminium; annealing; arsenic; elemental semiconductors; ion implantation; p-n junctions; silicon; N/P/N junction formation; Si:Al,As; annealing; arsenic inclusion; indirect aluminum incorporation; recoil implantation; silicon; Aluminum; Annealing; Argon; Artificial intelligence; Atomic layer deposition; Electrical resistance measurement; Etching; Impurities; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651550
Filename
651550
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