Title :
Indirect aluminum incorporation for N/P/N junctions formation in silicon
Author :
Godignon, P. ; Morvan, E. ; Montserrat, J. ; Jordá, X. ; Vellvehi, M. ; Flores, D. ; Rebollo, J. ; Millán, J.
Author_Institution :
Centro Nacional de Microelectron., Bellaterra, Spain
Abstract :
This paper presents a new method for Aluminum and Arsenic inclusion into silicon based on recoil implantation. Arsenic has been implanted through an Al layer and a silicon oxide layer. Experiments consisting in implantation+annealing have been carried out in order to obtain N+/P/N-/N+ structures. The feasibility of such structures is demonstrated and the problems linked to the process are identified for a further optimization of the technology
Keywords :
aluminium; annealing; arsenic; elemental semiconductors; ion implantation; p-n junctions; silicon; N/P/N junction formation; Si:Al,As; annealing; arsenic inclusion; indirect aluminum incorporation; recoil implantation; silicon; Aluminum; Annealing; Argon; Artificial intelligence; Atomic layer deposition; Electrical resistance measurement; Etching; Impurities; Silicon; Substrates;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651550
