Title :
Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications
Author :
Sanghun Jeon ; Kiju Im ; Hyundoek Yang ; Hyelan Lee ; Hyunjun Sim ; Sangmu Choi ; Taesung Jang ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
In this paper, we report on an investigation of the electrical characteristics of various amorphous lanthanide oxides prepared by e-beam evaporation. Excellent electrical characteristics were found for the amorphous lanthanide oxide including a high oxide capacitance, low leakage current, and high thermal stability. We also confirmed the excellent thermal stability and mobility characteristics of lanthanide silicate (PrSi/sub x/O/sub y/). In addition, lanthanide-doped HfO/sub 2/ also exhibited a significant reduction in leakage current at the same equivalent oxide thickness.
Keywords :
MIS devices; capacitance; carrier mobility; dielectric thin films; electron beam deposition; leakage currents; rare earth compounds; thermal stability; Dy/sub 2/O/sub 3/; Gd/sub 2/O/sub 3/; HfO/sub 2/; MOS gate dielectric; Nd/sub 2/O/sub 3/; Pr/sub 2/O/sub 3/; PrTiO; Sm/sub 2/O/sub 3/; amorphous lanthanide oxide; capacitance; carrier mobility; electrical characteristics; electron beam evaporation; equivalent oxide thickness; lanthanide doped oxide; lanthanide silicate; leakage current; thermal stability; Amorphous materials; Capacitance; Dielectric constant; Electric variables; Hafnium oxide; Leakage current; Materials science and technology; Neodymium; Samarium; Sputtering;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979545
