Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications

Author

Sanghun Jeon ; Kiju Im ; Hyundoek Yang ; Hyelan Lee ; Hyunjun Sim ; Sangmu Choi ; Taesung Jang ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2001

fDate

2-5 Dec. 2001

Abstract

In this paper, we report on an investigation of the electrical characteristics of various amorphous lanthanide oxides prepared by e-beam evaporation. Excellent electrical characteristics were found for the amorphous lanthanide oxide including a high oxide capacitance, low leakage current, and high thermal stability. We also confirmed the excellent thermal stability and mobility characteristics of lanthanide silicate (PrSi/sub x/O/sub y/). In addition, lanthanide-doped HfO/sub 2/ also exhibited a significant reduction in leakage current at the same equivalent oxide thickness.

Keywords

MIS devices; capacitance; carrier mobility; dielectric thin films; electron beam deposition; leakage currents; rare earth compounds; thermal stability; Dy/sub 2/O/sub 3/; Gd/sub 2/O/sub 3/; HfO/sub 2/; MOS gate dielectric; Nd/sub 2/O/sub 3/; Pr/sub 2/O/sub 3/; PrTiO; Sm/sub 2/O/sub 3/; amorphous lanthanide oxide; capacitance; carrier mobility; electrical characteristics; electron beam evaporation; equivalent oxide thickness; lanthanide doped oxide; lanthanide silicate; leakage current; thermal stability; Amorphous materials; Capacitance; Dielectric constant; Electric variables; Hafnium oxide; Leakage current; Materials science and technology; Neodymium; Samarium; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979545

Filename

979545