30% PAE W-Band InP Power Amplifiers Using Sub-Quarter-Wavelength Baluns for Series-Connected Power-Combining

Author

Hyun-Chul Park ; Daneshgar, Saeid ; Rode, Johann C. ; Griffith, Zach ; Urteaga, M. ; Byung-Sung Kim ; Rodwell, M.

Author_Institution

ECE Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA

fYear

2013

fDate

13-16 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

We present high-efficiency W-band power amplifier (PA) ICs with a new series-connected power combining technique using sub-quarter-wavelength transmission- line baluns. The PAs are implemented in a 0.25μm InP HBT process. At 86GHz, a single-stage PA exhibits 30.4% peak PAE, 20.37dBm P_out and 23GHz 3dB bandwidth. A two-stage PA exhibits 30.2% PAE, and 23.14dBm P_out. These values of PAE represent a 1.2:1 improvement in the state-of-the-art for E- and W- band PAs having similar RF output powers.

Keywords

III-V semiconductors; baluns; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; power combiners; E-band PA; InP; InP HBT process; PAE; frequency 23 GHz; frequency 86 GHz; high-efficiency W-band power amplifier IC; series-connected power combining technique; size 0.25 mum; subquarter-wavelength transmission- line baluns; Heterojunction bipolar transistors; Impedance; Impedance matching; Indium phosphide; Integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/CSICS.2013.6659182

Filename

6659182