• DocumentCode
    2166721
  • Title

    Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO2 interface on silicon

  • Author

    Gaiseanu, F. ; Kurger, D. ; Dimitriadis, C.A. ; Stocmenos, J. ; Postolache, C. ; Tsoukalas, D. ; Tsoi, E. ; Goustouridis, D.

  • Author_Institution
    Dev. for Microtechnol., Nat. Inst. of Res., Bucharest, Romania
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    67
  • Abstract
    We investigate the influence of structural modifications on the phosphorus doping of thin (0.4 μm) LP-CVD polysilicon layers deposited at 620°C on SiO2 films intentionally grown with a thickness of 4 nm on a (111) oriented, silicon substrate. The measurements by XTEM and SIMS permitted to correlate the structure modifications with the doping properties after the various drive-in diffusion conditions in the temperature range of (900°C-1000°C) of the polysilicon layers
  • Keywords
    CVD coatings; diffusion; elemental semiconductors; phosphorus; secondary ion mass spectra; semiconductor doping; semiconductor-insulator boundaries; silicon; silicon compounds; transmission electron microscopy; 620 C; 900 to 1000 C; LPCVD polysilicon layer; SIMS; Si:P-SiO2; SiO2 film; XTEM; drive-in diffusion; phosphorus doping; polysilicon/SiO2 interface; silicon substrate; Annealing; Conductivity; Doping; Frequency; Inductors; Microelectronics; Morphology; Physics; Power transistors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651551
  • Filename
    651551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2166721