Title :
Device simulation of generation-recombination noise under periodic large-signal conditions
Author :
Sanchez, J.E. ; Bosman, G. ; Law, M.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
The modulation of flicker (1/f or 1/f-like) noise is an important topic for RF communications, as it contributes to the stability of oscillators and the signal-to-noise ratio in mixers. For the first time, simulation results for trap-assisted generation-recombination (GR) noise under large-signal conditions are demonstrated for both a homogeneous resistor and a p/sup +/-n junction in a semiconductor device simulator using the harmonic balance and impedance field methods. It is believed that GR fluctuations are one mechanism which contributes to 1/f-like noise observed in semiconductor devices.
Keywords :
1/f noise; flicker noise; semiconductor device models; semiconductor device noise; simulation; 1/f noise modulation; 1/f-like noise; GR fluctuations; flicker noise; generation-recombination noise; harmonic balance methods; homogeneous resistor; impedance field methods; p/sup +/-n junction; periodic large-signal conditions; semiconductor device simulator; trap-assisted GR noise; 1f noise; Impedance; Noise generators; Oscillators; Radio frequency; Resistors; Semiconductor device noise; Semiconductor devices; Signal to noise ratio; Stability;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979549
