• DocumentCode
    2166761
  • Title

    A quantitative analysis of the penetration of SnO2 into porous silicon

  • Author

    Gartner, M. ; Savaniu, C. ; Parlog, C. ; Zaharescu, M. ; Craciun, G. ; Buiu, O. ; Szilagy, E. ; Cobianu, C.

  • Author_Institution
    Inst. of Phys. Chem., Acad. of Sci., Bucharest, Romania
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    71
  • Abstract
    The oxidation of monocrystalline silicon wafer (even at low temperatures ~500°C) through the pores of SnO2 sol-gel films deposited on it and the penetration of the Sn into the depth of porous silicon (PS) are quantitatively analyzed by Spectroscopic Ellipsometry (SE), Rutherford Back Scattering (RBS) and Infrared Spectroscopy (IR)
  • Keywords
    Rutherford backscattering; elemental semiconductors; ellipsometry; infrared spectra; oxidation; porous materials; silicon; sol-gel processing; tin compounds; 500 C; Rutherford backscattering; Si-SnO2; SnO2 penetration; SnO2 sol-gel film; infrared spectroscopy; monocrystalline silicon wafer; oxidation; porous silicon; quantitative analysis; spectroscopic ellipsometry; Dielectric substrates; Ellipsometry; Infrared sensors; Oxidation; Polymer films; Semiconductor films; Sensor arrays; Silicon; Sputtering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651552
  • Filename
    651552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2166761